s mhop microelectronics c orp. a stu/d15l01 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed c a ver 1.2 www.samhop.com.tw may,16,2014 1 details are subject to change without notice. t c =25 c g s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3.6 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 25 14.7 59 50 green product 13.6 32 product summary v dss i d r ds(on) (m ) max 100v 15a 195 @ vgs=4.5v 145 @ vgs=10v c halogen free. g s d
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 100 m ohm v gs =10v , i d =6a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics stu/d15l01 ver 1.2 www.samhop.com.tw may,16,2014 2 11.63.0 g fs s c iss 480 pf c oss 47 pf c rss 29 pf q g 9.8 nc 10.2 18 8.5 t d(on) 7.8 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =6a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance b f=1.0mhz b v sd nc q gs nc q gd 1.3 2.9 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.775 1.3 v notes v ds =50v,i d =6a,v gs =10v a.surface mounted on fr4 board of 1 inch 2 , 1oz. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) 5 v gs =4.5v , i d =5a m ohm 150 145 195
stu/d15l01 ver 1.2 www.samhop.com.tw may,16,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 15 12 9 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 10 8 6 4 2 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 240 200 160 120 80 40 1 369 15 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =6a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 3 v gs =10v 12 1 v gs =5v v gs =6v v gs =7v v gs =8v
stu/d15l01 ver 1.2 www.samhop.com.tw 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 10 1 0.1 80 v gs =10v single pulse t a =25 c r d s (on ) limit 420 350 280 210 140 70 0 24 68 10 0 125 c 75 c 25 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 900 750 600 450 300 150 0 10 15 20 25 30 0 5 i d =6a 10 8 6 4 2 0 01.53.0 4.5 6.0 7.5 9.0 10.5 12.0 v ds =50v i d =6a 110 100 1 10 100 300 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf dc 10 m s 1ms 100us may,16,2014
t p v (br )dss i as figure 13b. stu/d15l01 ver 1.2 www.samhop.com.tw may,16,2014 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
ver 1.2 www.samhop.com.tw may,16,2014 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380 stu/d15l01
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.2 may,16,2014 stu/d15l01
ver 1.2 www.samhop.com.tw may,16,2014 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu/d15l01
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu15l01 smc internal code no. (a,b,c...z) ver 1.2 stu/d15l01 may,16,2014
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STD15L01 smc internal code no. (a,b,c...z) ver 1.2 may,16,2014 stu/d15l01
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